Performance Evaluation of CNTFETs Fabricated with Carbon Nanotubes of Different Synthesis Methods

Single walled carbon nanotubes (SWCNTs) exhibit extraordinary electronic properties that render it as an exciting candidate to be applied the active channel of high-performance nanotube field effect transistors (CNTFETs). The SWCNTs have been demonstrated dependent on tube intrinsic includes structural defects, chirality and diameter. Structural defects can affected by synthesis method therefore latter should also affect device performance. Hence, this paper aims present influence source towards resulting CNTFET characteristics. A total four SWCNT samples were sourced from different methods in fabricating CNTFETs. are arc-discharge three variation chemical vapor deposition (CVD) processes, which DIPS, HiPco CoMoCAT, respectively. Prior fabrication, characterized via Raman spectroscopy quantifythe defect levels each sample, directly proportional G-peak D-peak height ratio, G/D. Electrical characterization was carried out 3-terminal I-Vmeasurement evaluate key performance parameters such ason-off current ION/IOFF, transconductance, gm,subthreshold slope, Spand mobility, μFE.Analysis shows G/Daffects IOFFmore significantly relative ION, increasing hence switching performance, when G/Dincreases. It is shown increase ~50% G/Dof resulted ~ 860% μFE. Based correlation between optical analysis electrical measurement, weconclude theSWCNT growth cansignificantly affectthe